Beranda / Komponen / Transistor / MOSFET / G80N60UFD G80N60 SGH80N60UFD Ultrafast IGBT 80A 600V
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G80N60UFD G80N60 SGH80N60UFD Ultrafast IGBT 80A 600V
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)